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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM16ND50CI Datasheet

N-Channel Power MOSFET

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TSM16ND50CI
Taiwan Semiconductor
N-Channel Power MOSFET
500V, 16A, 0.35Ω
FEATURES
100% UIS and Rg tested
Advanced planar process
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
500
0.35
53
V
Ω
nC
APPLICATIONS
Power Supply
AC/DC LED Lighting
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulse Avalanche Energy (Note 3)
Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
500
±30
16
10
64
59.5
608
7.8
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.1 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is
determined by the user’s board design.
1 Version: A1805


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM16ND50CI Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM16ND50CI
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
(Note 4)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 500V, VGS = 0V
VGS = 10V, ID = 4A
BVDSS
VGS(TH)
IGSS
IDSS
RDS(on)
500
2.5
--
--
--
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 8A,
VGS = 10V
Qg --
Qgs --
Qgd --
Input Capacitance
Ciss --
Output Capacitance
VDS = 50V, VGS = 0V,
f = 1.0MHz
Coss
--
Reverse Transfer Capacitance
Crss --
Gate Resistance
Rg --
Switching (Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, RG = 5Ω,
ID = 8A, VGS = 10V
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Body-Diode Continuous Forward Current
Body-Diode Pulsed Current
Forward On Voltage (Note 4)
IS = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
IS = 8A
dIF/dt = 100A/μs
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 20mH, IAS = 7.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW 300µs, duty cycle 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
IS
ISM
VSD
trr
Qrr
--
--
--
--
--
TYP
--
4
--
--
0.3
53
15.4
18.5
2551
153
15
1.5
17
27
40
24
--
--
--
280
3.4
MAX UNIT
--
4.5
±100
1
0.35
V
V
nA
µA
Ω
--
-- nC
--
--
-- pF
--
3Ω
--
--
ns
--
--
16 A
64 A
1.2 V
-- ns
-- μC
ORDERING INFORMATION
ORDERING CODE
TSM16ND50CI C0G
PACKAGE
ITO-220
PACKING
50pcs / Tube
2
Version: A1805


Part Number TSM16ND50CI
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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