TSM16ND50CI
TSM16ND50CI is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- 100% UIS and Rg tested
- Advanced planar process
- pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
500 0.35 53
V Ω n C
APPLICATIONS
- Power Supply
- AC/DC LED Lighting
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS VGS
IDM PDTOT EAS
IAS TJ, TSTG
500 ±30 16 10 64 59.5 608 7.8
- 55 to +150
UNIT V V A A A W m J A °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case...
