900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM13ND50CI Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM13ND50CI
Taiwan Semiconductor
N-Channel Power MOSFET
500V, 13A, 0.48Ω
FEATURES
KEY PERFORMANCE PARAMETERS
100% UIS and Rg tested
Advanced planar process
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
PARAMETER
VDS
RDS(on) (max)
Qg
VALUE
500
0.48
39
UNIT
V
Ω
nC
APPLICATIONS
Power Supply
AC/DC LED Lighting
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulse Avalanche Energy (Note 3)
Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
500
±30
13
8
52
57
608
7.8
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
Limit
UNIT
Junction to Case Thermal Resistance
RӨJC
2.2 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1 Version: A1804


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM13ND50CI Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM13ND50CI
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
(Note 4)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 500V, VGS = 0V
VGS = 10V, ID = 3.3A
BVDSS
VGS(TH)
IGSS
IDSS
RDS(on)
500
2.5
--
--
--
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching (Note 6)
VDS = 400V, ID = 6.5A,
VGS = 10V
VDS = 50V, VGS = 0V,
f = 1.0MHz
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
--
--
--
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, RG = 5Ω,
ID = 6.5A, VGS = 10V
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Body-Diode Continuous Forward Current
Body-Diode Pulsed Current
Forward Voltage (Note 4)
IS = 6.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
IS = 6.5A
dIF/dt = 100A/μs
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L = 20mH, IAS = 7.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW 300µs, duty cycle 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
IS
ISM
VSD
trr
Qrr
--
--
--
--
--
TYP
--
3
--
--
0.37
39
10
12
1877
128
7
1.1
11
21
32
22
--
--
--
282
2.9
MAX UNIT
--
3.8
±100
1
0.48
V
V
nA
µA
Ω
--
-- nC
--
--
-- pF
--
2.2 Ω
--
--
ns
--
--
13 A
52 A
1.2 V
-- ns
-- μC
ORDERING INFORMATION
PART NO.
TSM13ND50CI C0G
PACKAGE
ITO-220
PACKING
50pcs / Tube
2 Version: A1804


Part Number TSM13ND50CI
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
PDF Download

TSM13ND50CI Datasheet PDF






Similar Datasheet

1 TSM13ND50CI N-Channel Power MOSFET
Taiwan Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy