TSM120N10PQ56 Datasheet | Taiwan Semiconductor

Features - Low On-Resistance - Low Input Capacitance - Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony pounds. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Tc=25o C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Drain Current-Pulsed (Note 1) Single Pulse Avalanche Energy, L=0.5m H Maximum Power Dissipation (Note 2) Storage Temperature Range Operating Junction Temperature Range TC=25°C TA=25°C TC=25°C TA=25°C VDS VGS IDM EAS TSTG TJ Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA Limit 100 ±20 58 16.1 150 156 36 2 -55 to +150 -55 to +150 Limit 1.2...