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TSM120N06LCR - N-Channel Power MOSFET

Features

  • Low RDS(ON) to minimize conductive losses.
  • Logic level.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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TSM120N06LCR Taiwan Semiconductor N-Channel Power MOSFET 60V, 54A, 12mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.
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