TSM120N06LCR Datasheet | Taiwan Semiconductor

FEATURES - Low RDS(ON) to minimize conductive losses - Logic level - Low gate charge for fast power switching - 100% UIS and Rg tested - pliant to Ro HS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VGS = 10V VGS = 4.5V Qg 60 12 15 18 V mΩ n C APPLICATIONS - BLDC Motor Control - Battery Power Management - DC-DC converter - Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) TC = 25°C TA = 25°C VDS VGS IDM IAS EAS 60 ±20 54 10 216 19 54 Total...