TSM120N06LCP Overview
Key Features
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- 100% UIS and Rg tested
- Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
| Part | TSM120N06LCP |
|---|---|
| Description | N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Taiwan Semiconductor |
| Size | 257.32 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |