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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM025NB04LCR Datasheet

N-Channel Power MOSFET

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TSM025NB04LCR
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 161A, 2.5mΩ
FEATURES
Low RDS(ON) to minimize conductive losses
Logic level
Low gate charge for fast power switching
100% UIS and Rg tested.
175°C Operating Junction Temperature
Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
BLDC Motor Control
Battery Power Management
DC-DC converter
Secondary Synchronous Rectification
PDFN56
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
Qg
40
2.5
3.2
57
V
mΩ
nC
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
TC = 25°C
TA = 25°C
VDS
VGS
ID
40
±20
161
24
Pulsed Drain Current
Single Pulse Avalanche Current (Note 2)
Single Pulse Avalanche Energy (Note 2)
IDM 644
IAS 41
EAS 252
Total Power Dissipation
TC = 25°C
TC = 125°C
Total Power Dissipation
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
PD
PD
TJ, TSTG
136
45
3.1
1
- 55 to +175
UNIT
V
V
A
A
A
mJ
W
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1.1 °C/W
Junction to Ambient Thermal Resistance
RӨJA
48 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in2 pad of 2 oz copper.
1 Version: B1804


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM025NB04LCR Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM025NB04LCR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µ A
BVDSS
VGS(TH)
40
1
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-State Resistance
(Note 3)
Forward Transconductance (Note 3)
Dynamic (Note 4)
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = 40V
VGS = 0V, VDS = 40V
TJ = 125°C
VGS = 10V, ID = 24A
VGS = 4.5V, ID = 22A
VDS = 10V, ID = 24A
IGSS
IDSS
RDS(on)
gfs
--
--
--
--
--
--
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching (Note 4)
VGS = 10V, VDS = 20V,
ID = 24A
VGS = 4.5V, VDS = 20V,
ID = 24A
VGS = 0V, VDS = 20V
f = 1.0MHz
f = 1.0MHz
Qg
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
--
--
--
--
--
0.5
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, VDS = 20V,
ID = 24A, RG = 2Ω
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Forward Voltage (Note 3)
VGS = 0V, IS = 24A
VSD
Reverse Recovery Time
Reverse Recovery Charge
IS = 24A ,
dI/dt = 100A/μs
trr
Qrr
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 41A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
--
--
--
ORDERING INFORMATION
TYP
--
1.6
--
--
--
1.8
2.4
75
112
57
18
27
6435
675
388
1.5
4
23
75
40
--
38
31
MAX UNIT
--
2.5
±100
1
100
2.5
3.2
--
V
V
nA
µA
mΩ
S
--
-- nC
--
--
--
-- pF
--
3Ω
--
--
ns
--
--
1V
-- ns
-- nC
PART NO.
TSM025NB04LCR RLG
PACKAGE
PDFN56
PACKING
2,500pcs / 13Reel
2 Version: B1804


Part Number TSM025NB04LCR
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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