TSM018NA03CR Datasheet (PDF) Download
Taiwan Semiconductor
TSM018NA03CR

Key Features

  • Low RDS(ON) to minimize conductive losses
  • Low gate charge for fast power switching
  • 100% UIS and Rg tested
  • pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Applications

  • Battery Power Management