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TSM018NA03CR - N-Channel Power MOSFET

Datasheet Summary

Features

  • Low RDS(ON) to minimize conductive losses.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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TSM018NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 185A, 1.8mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 30 1.8 2.
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