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TSI10H200CW Datasheet Taiwan Semiconductor

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Taiwan Semiconductor · TSI10H200CW File Size : 235.77KB · 1 hits

Features and Benefits

- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYP.

TSI10H200CW TSI10H200CW TSI10H200CW
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Trench
Schottky
Rectifier
TSI10H200CW
TSI10H100CW
TSI10H120CW
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