• Part: TSCDT08065G1
  • Description: 650V SiC Merged PIN Schottky Diode
  • Category: Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 376.28 KB
TSCDT08065G1 Datasheet (PDF) Download
Taiwan Semiconductor
TSCDT08065G1

Key Features

  • Max junction temperature 175°C
  • MPS structure for high ruggedness to forward current surge events
  • High-speed switching possible
  • High forward surge capability
  • High-frequency operation
  • Positive temperature coefficient on VF
  • RoHS compliant
  • Halogen-free