Datasheet4U.com

TSCDT08065G1 Datasheet 650V SiC Merged PIN Schottky Diode

Manufacturer: Taiwan Semiconductor

Overview: TSCDT08065G1 Taiwan Semiconductor 8A, 650V SiC Merged PIN Schottky.

📥 Download Datasheet

TSCDT08065G1 650v sic merged pin schottky diode by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSCDT08065G1
Manufacturer	Taiwan Semiconductor
File Size	376.28 KB
Description	650V SiC Merged PIN Schottky Diode
Download	TSCDT08065G1 Download (PDF)

Key Features

Max junction temperature 175°C.
MPS structure for high ruggedness to forward current surge events.
High-speed switching possible.
High forward surge capability.
High-frequency operation.
Positive temperature coefficient on VF.
RoHS compliant.
Halogen-free KEY.

More Datasheets from Taiwan Semiconductor

Part Number	Description
TSCDT12065G1	650V SiC Merged PIN Schottky Diode
TSCDT20065G1	650V SiC Merged PIN Schottky Diode
TSCDF08065G1	650V SiC Merged PIN Schottky Diode
TSCDH30065G1	650V SiC Merged PIN Schottky Diode
TSC10	High Voltage NPN Transistor
TSC10CT	High Voltage NPN Transistor
TSC5301D	High Voltage NPN Transistor
TSC5302D	High Voltage NPN Transistor
TSC5304D	High Voltage NPN Transistor
TSC5304ED	High Voltage NPN Transistor