TSC742 Datasheet | Taiwan Semiconductor

Features - - High Voltage Capability High Switching Speed Block Diagram Structure - - Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TSC742CZ C0 Package TO-220 Packing 50pcs / Tube Absolute Maximum Rating (TA = 25o C, unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage @ VBE=0V Emitter-Base Voltage Collector Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature Storage Temperature Range Note: Single Pulse. PW = 300u S, Duty ≤2% Symbol VCBO VCES VEBO IC ICM IB IBM PDTOT TJ TSTG Limit 1050 420 15 4 8 2 4 70 +150 -55 to +150 Unit V V V A A A A W o o Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RӨJC RӨJA Limit 1.8 62.5 Unit o o C/W C/W 1/4 Version: B13 High Voltage NPN Transistor Electrical Specifications (TA = 25o C unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC =0.5m A IC =5m A IE =1m A VCE =400V, IB=0 VCB =950V, IE =0 IC=1A, IB =0.2A IC=3.5A, IB =1A IC=3.5A, IB =1A VCE =5V, IC = 0.1A VCE =3V, IC = 0.8A BVCBO BVCEO BVEBO ICEO ICBO VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 h FE 1050 420 15 -------48 23 -4.5 ----10 -0.15 1.2 1.0 70 28 -5 ----250 10 0.5 1.5 1.5 100 50 1 5.5 1.2 u S u S u S V V V u A u A V V...