TS13005 Datasheet | Taiwan Semiconductor

Features - - High Voltage High Speed Switching Block Diagram Structure - - Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13005CZ C0 TS13005CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube http://..net/ Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300u S, Duty ≤2% DC Pulse DC Pulse TO-220 ITO-220 Symbol VCBO VCEO VEBO IC IB Ptot TJ TSTG Limit 700V 400V 9 4 8 2 4 75 30 +150 - 55 to +150 Unit V V V A A W o o 1/6 Version: B07 datasheet pdf - http://..net/ High Voltage NPN Transistor Electrical Specifications (Ta = 25o C unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC =1m A, IB =0 IC =10m A, IE =0 IE =0.1m A, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A Base-Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance VCE =10V, IC =0.5A VCB =10V, f =0.1MHz http://..net/ Conditions Symbol BVCBO BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 h FE Min 700 400 9 --------15 8 4 ----- Typ --------------65 0.3 2.2 0.3 Max ---250 1 1 0.5 0.6 1 1.2 1.6 32 40 --0.7 3...