TS12N30CS Overview
Description
Taiwan Semiconductor’s new low cost, state of the art AceFET™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultralow Qg X RDS(ON) figure of merit.
Key Features
- 12A, 30V RDS(ON) = 6m at 4.5 Volts
- 12A, 30V Qg = 15nC at 4.5 Volts
- Low profile package: less than 1mm height when mounted on PCB
- Occupies only 1/3 the area of SO-8
- Excellent - High power and current handling capability
