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TS12N30CS - 30V Single N-Channel 4.5V Specified AceFET

General Description

Taiwan Semiconductor’s new low cost, state of the art AceFET™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultralow Qg X RDS(ON) figure of merit.

Key Features

  • 12A, 30V RDS(ON) = 6m at 4.5 Volts.
  • 12A, 30V Qg = 15nC at 4.5 Volts.
  • Low profile package: less than 1mm height when mounted on PCB.
  • Occupies only 1/3 the area of SO-8.
  • Excellent thermal characteristics.
  • High power and current handling capability.
  • Lead free solder balls available. AceFET™ for High Frequency DC-DC Converters Patent Pending DS D S D S S DS DS D DS D SD G S D S D S Ds D S DS D S SD SD S D Bottom: Bump Side.

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PRELIMINARY DATA SHEET For information only DC-DC Converter Control and Synchronous AceFET™ TS12N30CS – 30V Single N-Channel 4.5V Specified AceFET™ General Description Taiwan Semiconductor’s new low cost, state of the art AceFET™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultralow Qg X RDS(ON) figure of merit. D Ds G S Features • 12A, 30V RDS(ON) = 6m at 4.5 Volts • 12A, 30V Qg = 15nC at 4.5 Volts • Low profile package: less than 1mm height when mounted on PCB • Occupies only 1/3 the area of SO-8. • Excellent thermal characteristics. • High power and current handling capability. • Lead free solder balls available.