TS12N20CS Datasheet | Taiwan Semiconductor

atures 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8n C at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor’s new low cost, state of the art Micro Surf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. Patent Pending Internal Block Diagram Ds G Pin Configuration Standard Application Micro Surf™ for High Frequency DC-DC Converters Bottom: Bump Side -1- Rev. 1 05/2003 Absolute Maximum Ratings TA =25°C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed VDSS VGSS ID 20 V +12 V 6A 25 A Power Dissipation (Steady State) Operating and Storage Junction Temperature Range Thermal Characteristics PD TJ, TSTG - 55 to...