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TS12N20CS - Single N-Channel 4.5V Specified MicroSurf

Datasheet Summary

Description

Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit.

Features

  • 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available.

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Datasheet Details

Part number TS12N20CS
Manufacturer Taiwan Semiconductor
File Size 513.69 KB
Description Single N-Channel 4.5V Specified MicroSurf
Datasheet download datasheet TS12N20CS Datasheet
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PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Drain-Source Voltage 20 Volt Current ID 12 Ampere Features 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit.
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