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PRELIMINARY DATA SHEET
TSC TS12N20CS
Single N-Channel 4.5V Specified MicroSurf™
Drain-Source Voltage
20 Volt
Current ID 12 Ampere
Features
12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8
Excellent thermal characteristics High power and current handling capability Lead free solder balls available
Description
Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit.