SRT115 Datasheet | Taiwan Semiconductor

.. SRT12 - SRT115 1.0 AMP. Schottky Barrier Rectifiers TS-1 Features Plastic material used carries Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability Guard-ring for transient protection For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications High temperature soldering guaranteed: 260 o C /10seconds, 0.375” (9.5mm) lead length at 5 lbs. (2.3 kg) tension Mechanical Data Cases: Molded plastic body Terminals: Pure tin plated, lead free., solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode Mounting position: Any Weight: 0.20 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SRT SRT SRT Type Number 12 13 14 Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage 20 30 40 VDC Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ TA=25 C at Rated DC Blocking Voltage @ TA=125 o C Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 1) Operating Junction Temperature Range o SRT SRT SRT SRT SRT Units 15 16 19 110 115 50 35 50 60 42 60 1.0 25 90 63 90 100 150 70 105 100 150 V V V A A I(AV) IFSM VF IR 0.55 10 110 0.5 0.70 5 80 50 0.80 0.1 2.0 28 V m A m A p F C/W o C o C Cj RθJA TJ o -65 to + 125 Storage Temperature Range TSTG Notes: 1. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. 2. Measured at 1.0 MHz and Applied VR=4.0 Volts -65 to + 150 - 65 to +...