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1N4749A - Glass Passivated Junction Silicon Zener Diodes

Download the 1N4749A datasheet PDF. This datasheet also covers the 1N4740A variant, as both devices belong to the same glass passivated junction silicon zener diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • AEC-Q101 qualified available.
  • Glass passivated chip junction.
  • Low profile package.
  • Built-in strain relief.
  • Low inductance.
  • Typical IR less than 5μA above 11V.
  • RoHS Compliant.
  • Halogen-free according to IEC 61249-2-21.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4740A-TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for 1N4749A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1N4749A. For precise diagrams, and layout, please refer to the original PDF.

1N4740A – 1M200Z Taiwan Semiconductor 1W, 10V - 200V Zener Diode FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● Low profile package ● Built-in...

View more extracted text
able ● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● For general purpose regulation and protection applications KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: I

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