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D2014UK Datasheet RF Silicon Mosfet

Manufacturer: TT Electronics

General Description

: Single-Ended RF Silicon Mosfet.

2.5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 17.5W 65V +20V 1A -65 to +150°C 200°C MAX UNITS 10.0 °C/W General Note TT Electronics reserves the right to make changes in product specification without notice or liability.

All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.

Overview

RF Silicon Mosfet 2.5W 500MHz 28V Single-Ended D2014UK.

Key Features

  • Simplified Amplifier Design.
  • Suitable for Broad Band.