* Simplified Amplifier Design
* Suitable for Broad Band Applications
* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – .

* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – 13dB Minimum
* RoHS Comp.

Single-Ended RF Silicon Mosfet. 2.5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain
  – Source Breakdown Voltage BVGSS Gate
  – Source Breakdown Voltage .

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