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SILICON NPN TRANSISTOR
BDY54
• High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching
and Amplifier Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
180V
VCEO
Collector – Emitter Voltage
120V
VEBO
Emitter – Base Voltage
7V
IC
Continuous Collector Current
12A
IB
Base Current
5A
PD
Total Power Dissipation at TC = 25°C
60W
Derate Above 25°C
0.35W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 2.9
Units °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
BDY54 Datasheet
