BDX63B
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C
Hermetic TO3 Metal Package
Ideally Suited for General Purpose Switching and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
BDX63 BDX63A BDX63B
VCEO VCBO VEBO
Drain
- Source Voltage Gate
- Source Voltage Continuous Drain Current, Per Device
60V
80V
100V
80V
100V 120V
5V
Collector Current
Collector Current (peak)
Base Current
Ptot
Total Power Dissipation @ TC = 25°C
Junction Temperature Range
8A 12A 150m A 90W -55 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
BDX63C 120V 140V
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 1.94
Units °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to...
