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4N47TX - Hi-Reliability Optically Coupled Isolator

Download the 4N47TX datasheet PDF. This datasheet also covers the 4N47 variant, as both devices belong to the same hi-reliability optically coupled isolator family and are provided as variant models within a single manufacturer datasheet.

Description

Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package.

Devices are designed for military and/or harsh environments.

The suffix le er “A” denotes the collector is electrically isolated from the case.

Features

  •  TO-78 hermetically sealed package.
  •  High current transfer ratio.
  •  1 kV electrical isolation.
  •  Base contact provided for conventional transistor biasing.
  •  TX and TXV devices processed to MIL-PRF-19500.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (4N47-TT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 4N47TX
Manufacturer TT Electronics
File Size 331.14 KB
Description Hi-Reliability Optically Coupled Isolator
Datasheet download datasheet 4N47TX Datasheet

📁 Similar Datasheet

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4N47BU OPTOCOUPLERS Micropac Industries
4N40 PHOTO SCR OPTOCOUPLERS Fairchild Semiconductor
4N40 PHOTO SCR OPTOCOUPLERS QT Optoelectronics

Other Datasheets by TT Electronics

Part Number Description
4N47 Hi-Reliability Optically Coupled Isolator
4N47A Hi-Reliability Optically Coupled Isolator
4N47U Surface Mount Optically Coupled Isolator
4N48 Hi-Reliability Optically Coupled Isolator
4N48A Hi-Reliability Optically Coupled Isolator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Hi-Reliability Optically Coupled Isolator 4N22, 4N23, 4N24 [A] (TX, TXV) 4N47, 4N48, 4N49 [A] (TX, TXV) Features:  TO-78 hermetically sealed package  High current transfer ratio  1 kV electrical isolation  Base contact provided for conventional transistor biasing  TX and TXV devices processed to MIL-PRF-19500 Description: Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package. Devices are designed for military and/or harsh environments. The suffix le er “A” denotes the collector is electrically isolated from the case. The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV) devices are processed to MIL‐PRF‐19500/486.
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