2N3810DCSM - SILICON DUAL MATCHED PNP TRANSISTORS

TT Electronics

Datasheet Details

Part number	2N3810DCSM
Manufacturer	TT Electronics
File Size	626.25 KB
Description	SILICON DUAL MATCHED PNP TRANSISTORS
Datasheet	2N3810DCSM Datasheet

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SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -50mA PD Total Power Dissipation at TA = 25°C 500mW 600mW(1) Derate Above 25°C 2.86mW/°C 3.43mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES (Each Side) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. 1Typ. Max.