2N3114CSM - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Datasheet Details

Part number	2N3114CSM
Manufacturer	TT
File Size	144.61 KB
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet	2N3114CSM Datasheet
Additional preview pages of the 2N3114CSM datasheet.

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 150mA PD Total Power Dissipation at TA = 25°C 350mW Derate Above 25°C 2mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max.

Published: Jun 24, 2017 |