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2N2907AQCSM - QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS

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Part number 2N2907AQCSM
Manufacturer TT
File Size 192.14 KB
Description QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS
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QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 2N2907AQCSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Per Device Total Package VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 500mW 2W Derate Above 37.5°C 3.08mW/°C 12.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES (Each Device) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max.
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