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TMD4N65AZG - N-channel MOSFET

Download the TMD4N65AZG datasheet PDF. This datasheet also covers the TMD4N65AZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification.
  • Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W I-PAK Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TMD4N65AZ-TRinno.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TMD4N65AZG
Manufacturer TRinno
File Size 442.42 KB
Description N-channel MOSFET
Datasheet download datasheet TMD4N65AZG Datasheet

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Other Datasheets by TRinno

Part Number Description
TMD4N65AZ N-channel MOSFET
TMD4N65Z N-channel MOSFET
TMD4N65ZG N-channel MOSFET
TMD4N60AZ N-channel MOSFET
TMD4N60AZG N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.
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