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Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors
2SA1235A
FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
0. 025 0. 95¡ À
2. 80¡ À 0. 05 1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN -60 -50 -6 -0.1 -0.1 150 90 -0.3 -1 V V 500 MAX UNIT V V V
Ic= -100 µA, IE=0 Ic= -0.