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BD442 Datasheet POWER TRANSISTORS

Manufacturer: TRANSYS Electronics

Download the BD442 datasheet PDF. This datasheet also includes the BD438 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BD438_TRANSYSElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BD442
Manufacturer TRANSYS Electronics
File Size 99.95 KB
Description POWER TRANSISTORS
Datasheet download datasheet BD442 Datasheet

General Description

SYMBOL Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 3.5 100 ºC/W ºC/W VCBO VCES VCEO VEBO IC IB PD PD BD433 BD434 22 22 22 BD435 BD436 32 32 32 BD437 BD438 45 45 45 5.0 4.0 7.0 1.0 36.0 1.25 10 - 65 to 150 BD439 BD440 60 60 60 BD441 BD442 80 80 80 UNIT V V V V A A A W W mW/ ºC ºC Collector Peak Current (t=10ms_ ICM Tj, Tstg ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) TEST CONDITION DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 VCB=Rated VCBO, IE=0 ICBO Collector Cut off Current <100 <100 <100 <100 <100 Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage ICES IEBO *VCEO (sus) *VCE (sat) VBE=0, VCE=Rated VCES VEB=5V, IC=0 IC=100mA, IB=0 IC=2.0A, IB=0.2A <100 <1.0 >22 <0.5 <100 <1.0 >32 <0.5 <100 <1.0 >45 <0.6 typ 0.58 <1.1 <1.1 <1.2 <1.5 <1.5 <100 <1.0 >60 <0.8 <100 <1.0 >80 <0.8 UNIT µA µA mA V V V V *VBE (on) IC=10mA, VCE=5V ALL IC=2.0A, VCE=1V EPITAXIAL SILICON POWER TRANSISTORS BD433 BD435 BD437 BD439 BD441 NPN BD434 BD436 BD438 BD440 BD442 PNP EC B TO126 Plastic Package ELECTRICAL www.DataSheet4U.com CHARACTERISTICS (TC=25ºC unless specified otherwise) TEST CONDITION DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 IC=10mA, VCE=5V *hFE >40 >40 >30 >20 >15 DC Current Gain IC=500mA, VCE=1V >85 >85

Overview

Transys Electronics L I M I T E D EPITAXIAL SILICON POWER TRANSISTORS BD433 BD435 BD437 BD439 BD441 NPN BD434 BD436 BD438 BD440 BD442 PNP EC B www.DataSheet4U.

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More Datasheets from TRANSYS Electronics

Part Number Description
BD440 POWER TRANSISTORS
BD441 POWER TRANSISTORS
BD433 EPITAXIAL SILICON POWER TRANSISTORS
BD434 EPITAXIAL SILICON POWER TRANSISTORS
BD435 EPITAXIAL SILICON POWER TRANSISTORS
BD436 EPITAXIAL SILICON POWER TRANSISTORS
BD437 EPITAXIAL SILICON POWER TRANSISTORS
BD438 POWER TRANSISTORS
BD439 POWER TRANSISTORS