Datasheet4U Logo Datasheet4U.com

2N3440 Datasheet NPN HIGH VOLTAGE SILICON TRANSISTORS

Manufacturer: TRANSYS

Download the 2N3440 datasheet PDF. This datasheet also includes the 2N3439 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3439_TRANSYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3440
Manufacturer TRANSYS
File Size 113.38 KB
Description NPN HIGH VOLTAGE SILICON TRANSISTORS
Download 2N3440 Download (PDF)

General Description

SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.6 Derate Above 25 deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-a) 175 Junction to Ambient Rth(j-c) 35 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus)* IC=50mA,IB=0 Collector -Emitter Voltage ICBO VCB=360V, IE=0 Collector-Cut off Current VCB=250V, IE=0 ICEO VCE=300V, IB=0 VCE=200V, IB=0 ICEX VCE=450V,VBE=1.5V VCE=300V,VBE=1.5V IEBO VEB=6V, IC=0 Emitter-Cut off Current hFE* IC=2mA,VCE=10V DC Current Gain IC=20mA,VCE=10V IC=50mA,IB=4mA Collector Emitter Saturation Voltage VCE(Sat)* VBE(Sat) * IC=50mA,IB=4mA Base Emitter Saturation Voltage www.DataSheet.net/ 2N3440 250 300 UNITS V V V A A W mW/deg C W mW/deg C deg C deg C/W deg C/W 2N3439 >350 <20 <20 <500 <20 >30 40-160 <0.5 <1.3 2N3440 >250 <20 <50 <500 <20 40-160 <0.5 <1.3 UNITS V uA uA uA uA uA uA uA V V Datasheet pdf - http://www.DataSheet4U.co.kr/ ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N3439/3440 DESCRIPTION SYMBOL TEST CONDITION 2N3439 2N3440 SMALL SIGNAL CHARACTERISTICS hfe IC=5mA, VCE=10V, >25 >25 Small Signal Current Gain.

f=1kHz Cob VCB=10V, IE=0, f=1MHz <10 <10 Output Capacitance Cib VEB=5V, IC=0, f=1MHz <75 <75 Input Capacitance ft IC=10mA, VCE=10V >15 >15 Current Gain-Bandwidth Product f=5MHz Re(hie) VCE-10V, IC=5mA <300 <300 Real Part of Input Impedence f=1MHz *Pulse Test:- Pulse Width =300us, Duty Cycle

Overview

Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
STMicroelectronics Logo 2N3440 SILICON NPN TRANSISTORS STMicroelectronics
Seme LAB Logo 2N3440 HIGH VOLTAGE NPN TRANSISTORS Seme LAB
TT Logo 2N3440 HIGH VOLTAGE NPN TRANSISTORS TT
Microsemi Logo 2N3440 NPN LOW POWER SILICON TRANSISTOR Microsemi
NTE Logo 2N3440 Silicon NPN Transistor NTE

More Datasheets from TRANSYS

Part Number Description
2N3439 NPN HIGH VOLTAGE SILICON TRANSISTORS
2N3773 NPN SILICON PLANAR POWER TRANSISTOR