Datasheet4U Logo Datasheet4U.com

TC2896 - 5 W Flange Ceramic Packaged GaAs Power FETs

General Description

The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 5 W Typical Power at 6 GHz.
  • 8 dB Typical Linear Power Gain at 6 GHz.
  • High Linearity: IP3 = 47 dBm Typical at 6 Ghz.
  • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz.
  • Suitable for High Reliability.

📥 Download Datasheet

Datasheet Details

Part number TC2896
Manufacturer TRANSCOM
File Size 127.25 KB
Description 5 W Flange Ceramic Packaged GaAs Power FETs
Datasheet download datasheet TC2896 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC28C43 BiCMOS CURRENT MODE PWM CONTROLLERS TelCom
TC28C46 CMOS CURRENT MODE PWM CONTROLLER TelCom
TC28C46 CMOS CURRENT MODE PWM CONTROLLER Teledyne
TC28C47 CMOS CURRENT MODE PWM CONTROLLER Teledyne
TC2-1TX+ RF Transformer Mini-Circuits

Other Datasheets by TRANSCOM

Part Number Description
TC2181 Low Noise and High Dynamic Range Packaged GaAs FETs
TC2182 Low Noise Ceramic Packaged PHEMT GaAs FETs
TC2201 Plastic Packaged Low Noise PHEMT GaAs FETs
TC2211 Plastic Packaged Low Noise PHEMT GaAs FETs
TC2281 Low Noise and High Dynamic Range Packaged GaAs FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Lg = 0.6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.