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TC2896 - 5 W Flange Ceramic Packaged GaAs Power FETs

Description

The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

  • 5 W Typical Power at 6 GHz.
  • 8 dB Typical Linear Power Gain at 6 GHz.
  • High Linearity: IP3 = 47 dBm Typical at 6 Ghz.
  • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz.
  • Suitable for High Reliability.

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Datasheet preview – TC2896

Datasheet Details

Part number TC2896
Manufacturer TRANSCOM
File Size 127.25 KB
Description 5 W Flange Ceramic Packaged GaAs Power FETs
Datasheet download datasheet TC2896 Datasheet
Additional preview pages of the TC2896 datasheet.

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Full PDF Text Transcription

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TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Lg = 0.6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
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