TC2896 fets equivalent, 5 w flange ceramic packaged gaas power fets.
* 5 W Typical Power at 6 GHz
* 8 dB Typical Linear Power Gain at 6 GHz
* High Linearity: IP3 = 47 dBm Typical at 6 Ghz
* High Power Added Efficiency: Nomi.
include high dynamic range power amplifiers for commercial and military high performance power applications.
ELECTRICAL.
The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent qualit.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 127.25KB)