TC1601 fets equivalent, 2w high linearity and high efficiency gaas power fets.
! 2W Typical Power at 6 GHz
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! Linear Power Gain: GL = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Via Holes Source Gro.
The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high
linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which
provides low thermal resistance and .
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