HX5N80 mosfet equivalent, n-channel mosfet.
z RDS(ON) = 2.6Ω@VGS = 10 V z Low gate charge ( typical 25nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability
*.
such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
* Features
z RDS(ON) = 2.
The HX5N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
* Features
z RDS(.
Image gallery
TAGS
Download (Size : 689.35KB)