MMBT5401LT1 datasheet, transistor equivalent, TGS

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Features and benefits

* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings
* Maximum Temperatures Stora.

Application

requiring high breakdown voltages. Features
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* .

Description

The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings
* .

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