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2SD401A Datasheet

Complementary Silicon Power Ttransistors

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TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Ttransistors
Product specification
2SB546A / 2SD401A
( Ta = 25 OC)
DESCRIPTION
The 2SB546A and 2SD401A are high voltage triple diffused silicon transistors,
These devices are designed for use in line-operated color TV vertical defiection of
complementary symmetry circuit,
The 2SB546A and 2SD401A are complementary transistors, consisting of straight leads
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Symbol Value Unit
VCBO 200 V
VCEO
VEBO
IC
IC(peak)
Ptot
Tj
Tstg
150
5
2.0
3.0
30
150
-55~150
V
V
A
A
W
oC
oC
TO-220
www.DataSheet.co.kr
ELECTRICAL CHARACTERISTICST SEMICONDUCTOR CO., LTD
Parameter
Symbol Test Conditions
Collector Cutoff Current
ICBO VCB=150V, IE=0
Emitter Cut-off Current
IEBO VEB=4.0V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Collector capacitance
Transition Frequency
VCEO
hFE(1)
VCE(sat)
CC
fT
IC=10mA, IB=0
VCE=10V, IC=400mA
IC=500mA,IB=50mA
VCB=10V,f=1.0MHz, IE=0
VCE=10V,IC=400mA
Min.
150
40
Typ.
75/45
7.0
Max.
50
50
2.0
Unit
uA
uA
V
V
pF
MHz
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 2SD401A
Description Complementary Silicon Power Ttransistors
Maker TGS
Total Page 1 Pages
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