D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l .

High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PI.

TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue
  – grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototr.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts