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TEMIC

Si9943DY Datasheet Preview

Si9943DY Datasheet

Dual Enhancement-Mode MOSFET

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TEMIC
Siliconix
Si9943DY
Dual Enhancement-Mode MOSFET (N- and P-Channel)
Product Summary
Vns(V)
N-Channel
20
P-Channel
-20
rnS(on) (Q)
0.125 @vGS = 10V
0.250@VGS = 4.5 V
0.160@VGS = -10 V
0.300 @ VGS = -4.5 V
In (A)
±3.0
±2.0
±2.8
±2.0
80-8
0Sl
Gl 2
S2 3
G2 4
Dl
7 Dl
6 D2
5 D2
ThpView
Dl Dl
S2
G1o---J
Sl
N-Channel MOSFET
D2 D2
P-Channel MOSFET
H
0
0
~
~
:Hs
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150'C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Thmperature Range
ITA=25'C
ITA=70'C
ITA=25'C
ITA= 70'C
Symbol
Vns
VGS
In
InM
Is
Pn
TJ.T,tg
N-Cbannel
P-Cbannel
20 -20
±20 ±20
±3.0
±2.B
±2.5
±2.3
±10 ±10
1.6 -1.6
2.0
1.3
-55 to 150
Unit
V
A
W
'C
Thermal Resistance Ratings
Parameter
Maximum Junctton-to-Ambient (Surface Mounted on FR4 Board)
P-35337-Rev. C (05/02/94)
Symbol
RthJA
N- or P-Cbannel
62.5
Unit
'CfW
1-71




TEMIC

Si9943DY Datasheet Preview

Si9943DY Datasheet

Dual Enhancement-Mode MOSFET

No Preview Available !

TEMIC
Si9943DY
Siliconix
Specifications (TJ - 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
rDS(on)
Forward 'fransconductanceb
Diode Forward Voltageb
-n,.JJft.t.l.O_ f.t..1.._I_;........
Sf,
VSD
VDS = VGS, ID = 250 jlA
VDS = VGS,ID = -250 jlA
VDS = Ov, VGS = ±20V
VDS = 16 V, VGS = OV
VDS = -16 V, VGS = OV
VDS = 16 V, VGS = Ov, TJ = 55"C
VDS - -16 V, VGS - 0 V, TJ - 55"C
VDS'" 5V,VGS = lOV
VDSS -5V,VGs=-10V
VDS'" 5 V, VGS = 4.5 V
VDS S -5 V, VGS - -4.5 V
VGS = 10V,ID = 3.0A
VGS = -10V,ID = 3.0A
VGS = 6V,ID = 2.0 A
VGS = - 6V,ID = 2.0A
VGS = 4.5 V, ID = 1.5 A
VGS = -4.5 V, ID = 1.5 A
VDS = 15 V, ID = 3.0A
VDS - -15 V, ID - -3.0A
Is - 1.25 A, VGS = 0 V
Is = -1.25 A, VGS = OV
I N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
10
-10
2
-2
0.100
0.120
Thtal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Og
N-Channel
VDS = 1OV, VGS = 10 V, ID = 2.3 A
Og,
P-Channel
VDS= -10 V, VGS= -10V,ID= -2.3 A
Ogd
Thrn-On Delay TIme
Rise TIme
Thrn-Off Delay TIme
Fall TIme
td(on)
tr
td(olf)
tl
N-Channel
VDD = 20 V, RL = 20Q
ID '" 1A,VGEN=10V,RG=6Q
P-Channel
VDD= -20V,RL=20Q
ID'" -1 A,VGEN = -10V,RG=6Q
Source-Drain Reverse Recovery TIme
trr
IF = 1.25 A, diJdt = 100 NIlS
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width S 300 !,S, duty cycle S 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1YP"
0.100
0.130
0.120
0.160
0.160
0.20
3.7
3.0
0.9
-1.4
5.2
9.4
0.8
1.3
2.0
2.0
5
12
10
19
25
42
22
27
69
69
Max Unit
V
±loo
2
-2
25
-25
nA
jlA
A
0.125
0.160
0.160
0.200
0.250
0.300
1.2
-1.6
Q
S
V
25
25
nC
15
40
20
40
50
ns
90
50
50
100
100
1-72
P-35337-Rev. C (05/02/94)


Part Number Si9943DY
Description Dual Enhancement-Mode MOSFET
Maker TEMIC
Total Page 6 Pages
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