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TEMIC

Si9407DY Datasheet Preview

Si9407DY Datasheet

P-Channel Enhancement-Mode MOSFET

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P-Channel Enhancement-Mode MOSFET
Si9407DY
Product Summary
VDS (V)
–60
rDS(on) (W)
0.150 @ VGS = –10 V
0.240 @ VGS = –4.5 V
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
ID (A)
"3.0
"2.4
SSS
G
DDDD
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–60
"20
"3.0
"2.4
"12
–2.5
2.5
1.6
–55 to 150
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
50 _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1203. A SPICE Model data sheet is available for this product (FaxBack document #5129).
Siliconix
S-47958—Rev. E, 15-Apr-96
1




TEMIC

Si9407DY Datasheet Preview

Si9407DY Datasheet

P-Channel Enhancement-Mode MOSFET

No Preview Available !

Si9407DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –48 V, VGS = 0 V
VDS = –48 V, VGS = 0 V, TJ = 55_C
VDS v –5 V, VGS = –10 V
VGS = –10 V, ID = 3.0 A
VGS = –4.5 V, ID = 1.6 A
VDS = –15 V, ID = –3.0 A
IS = –2.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = –30 V, VGS = –10 V, ID = –3.0 A
VDD = –25 V, RL = 25 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –3.0 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Min Typa Max Unit
–1 V
"100 nA
–1
mA
–10
–12 A
0.11 0.150
0.15 0.24
W
5.5 S
–0.9 –1.2
V
24.6 50
3.5 nC
7.5
11 30
13 40
55 100 ns
20 45
80 120
2 Siliconix
S-47958—Rev. E, 15-Apr-96


Part Number Si9407DY
Description P-Channel Enhancement-Mode MOSFET
Maker TEMIC
Total Page 4 Pages
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