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TELEFUNKEN Semiconductors
BUF672
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage
95 9630
Applications
Electronic lamp ballast circuits Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range
xTcase 25°C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter Junction