D High power gain D SMD-package
1
BFS17/BFS17R
1
23
94 9280
BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu
32
95 10527
BFS17R Ma.
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Silicon NPN Planar RF Transistor
Applications
For broadband amplifiers up to 1 GHz.
Features
D High power gain D SMD-package
1
BFS17/BFS17R
1
23
94 9280
BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu
32
95 10527
BFS17R Marking: E4 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
Symbol
VCBO VCEO VEBO
IC Ptot Tj Tstg
Value 25 15 2.
BFS17 Datasheet
