3C91C Datasheet | TEMIC Semiconductors

Description The 3C91C/ 3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead hermetically sealed metal can. Applications Galvanically separated circuits for general purposes 96 12256 Features D Hermetically-sealed case D High isolation resistance D DC isolation test voltage 1000 V D Coupling capacitance of typical 1.5 p F D Low temperature coefficient of CTR D High operation temperature range D Current Transfer Ratio (CTR) of typical 100% Pin Connection C 95 10794 3C91C C 95 10803 3C92C TELEFUNKEN Semiconductors Rev. A2, 10-Dec-96 1 (10) 3C91C/ 3C92C Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector current Power dissipation...