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IRF9610 - 200V/1.75A P-Channel Power MOSFET

General Description

Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Key Features

  • VDSS= -200V, ID= -1.75A.
  • RDS(ON) ≤ 3.0 Ω @ VGS= -10V TO-220 Pin Configuration 1: GATE 2: DRAIN 3: SOURCE TO-220.

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Datasheet Details

Part number IRF9610
Manufacturer TAITRON
File Size 757.16 KB
Description 200V/1.75A P-Channel Power MOSFET
Datasheet download datasheet IRF9610 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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200V/1.75A P-Channel Power MOSFET (Discontinued) IRF9610 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability Features  VDSS= -200V, ID= -1.75A  RDS(ON) ≤ 3.0 Ω @ VGS= -10V TO-220 Pin Configuration 1: GATE 2: DRAIN 3: SOURCE TO-220 TAITRON DISTRIBUTION SUPER STORE (TDSS) www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/NX Page 1 of 1 IRF9610 SAMSUNG Absolute Maximum Ratings Symbol Description IRF9610 VDSS VDGR VGS ID ID IDM IGM EAS IAS Drain-Source Voltage (1) Drain-Gate Voltage (RGS =1.