* Planar Die construction
* 200mW Power Dissipation
* Zener Voltage 3.9v to 75v
* Ideally Suited for Automated Assembly Processes
* RoHS Compliance Me.

Value Unit Conditions *Ptot IFSM TJ Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction Temperature 200 2.0 150 mW Ta=25 °C (Note 1) A (Note 2) °C TSTG Storage.

BZX384C30

BZX384C30-G

BZX384C30-V

BZX384C33

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BZX384C33-V

BZX384C36

BZX384C36-G

BZX384C36-V

BZX384C39-G

BZX384C39-V

BZX384C3V0

BZX384C3V0-G

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