2N7002KDWS mosfet equivalent, double n-channel mosfet.
* Advanced Trench Process Technology
* High density cell design for low RDS(ON)
* Very low leakage current in off condition
* ESD Protected 2000V HBM
.
2N7002KDWS
VDSS VGSS
ID IDP
PD
TJ TSTG ESD
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed
Drain Power Dissipation
Junction Temperature Storage Temperature Range Gate-Source ESD Rating
TA=25°C TA=75°C
60 ±2.
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