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TMF3202Z - N-Channel Dual-Gate MOSFET

Description

The TMF3202Z is an enhancement type N-channel field-effect transistor.

The source and substrate are interconnected.

Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC.

Features

  • s - Gain controlled amplifier with AGC - Integrated gate protection diodes - High AGC-range, high gain, low noise figure.

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Datasheet Details

Part number TMF3202Z
Manufacturer TACHYONICS
File Size 254.01 KB
Description N-Channel Dual-Gate MOSFET
Datasheet download datasheet TMF3202Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Specification N-Channel Dual-Gate MOSFET □ Description The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT343 micro-miniature plastic package. TMF3202Z SOT343 Unit in mm 2 3 1 4 □ Features - Gain controlled amplifier with AGC - Integrated gate protection diodes - High AGC-range, high gain, low noise figure □ Applications - Professional communications equipment www.DataSheet4U.com - Gain controlled input stage for UHF and VHF tuners 1. SOURCE 2. DRAIN 3. GATE 2 4.
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