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Suntac

C8050 Datasheet Preview

C8050 Datasheet

NPN Silicon Transistor

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STC8050
0 NPN Silicon Transistor
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
40
40
6
1.5
1
150
65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE (sat)
VBE (sat)
VBE (on)
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Test Condition
IC= 100µA, IE=0
IC= 2mA, IB=0
IE= 100µA, IC=0
VCB= 35V, IE=0
VEB= 6V, IC=0
VCE= 1V, IC= 5mA
VCE= 1V, IC= 100mA
VCE= 1V, IC= 800mA
IC= 800mA, IB= 80mA
IC= 800mA, IB= 80mA
VCE= 1V, IC= 10mA
VCB= 10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE= 10V, IC= -50mA
Min.
40
40
6
45
85
40
100
Typ.
170
160
80
0.28
0.98
0.66
15
200
Max.
100
100
Units
V
V
V
nA
nA
300
0.5 V
1.2 V
1.0 V
pF
MHz
hFEClassification
Classification
hFE2
A
85 ~ 160
B
120 ~ 200
C
200 ~ 400




Suntac

C8050 Datasheet Preview

C8050 Datasheet

NPN Silicon Transistor

No Preview Available !

Typical Characteristics
STC8050
-0.5
IB=-4.0mA
-0.4 IB=-3.5mA
IB=-3.0mA
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
IB=-1.0mA
-0.1
IB=-0.5mA
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10000
IC=10IB
-1000
-100
VBE(sat)
VCE(sat)
-10
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
f=1MHz
IE=0
1000
100
VCE = -1V
10
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
-100
VCE = -1V
-10
-1
-0.1
-0.0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
-1.2
Figure 4. Base-Emitter On Voltage
1000
VCE=-10V
10 100
1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product


Part Number C8050
Description NPN Silicon Transistor
Maker Suntac
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C8050 Datasheet PDF






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