900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SpecTek

P8M648YLE Datasheet Preview

P8M648YLE Datasheet

(P8M648YLx / P8M6416YLEx) 8M/16M x 64 DIMM SDRAM Module

No Preview Available !

Preliminary Release V1
SDRAM MODULE
P8M648YL, P16M6416YL
P8M648YLE, P16M6416YLE
8M, 16M x 64 DIMM
Features:
PC-100 and PC133 Compatible
JEDEC – Standard 168-pin , dual in-line memory
Module (DIMM)
TSOP components.
Single 3.3v +.3v power supply.
Nonbuffered fully synchronous; all signals measured on
positive edge of system clock.
Internal pipelined operation; column address can be
changed every clock cycle.
Quad internal banks for hiding row access/precharge.
64ms 4096 cycle refresh.
All inputs, outputs, clocks LVTTL compatible.
Options:
8 - 8Mx8 SDRAM TSOP
16 - 8Mx8 SDRAM TSOP
Part Number:
P8M648YL-XX
P16M6416YL-XX
Embedded Resistor Versions
8 - 8Mx8 SDRAM TSOP
16 - 8Mx8 SDRAM TSOP
P8M648YLE-XX
P16M6416YLE-XX
KEY DIMM MODULE TIMING PARAMETERS
Module Component Clock
CAS
Marking Marking
Frequency Latency
-100CL3
-8A
100MHz
3
-133CL3
-75A
133MHz
3
GENERAL DESCRIPTION
The P8M648YL, P8M648YLE, P16M6416YL, and
P16M6416YLE are high performance dynamic random-
access 64MB and 128MB modules respectively. These
modules are organized in a x64 configuration, and utilize
quad bank architecture with a synchronous interface. All
signals are registered on the positive edge of the clock
signals CK0 through CK3. Read and write accesses to the
SDRAM are burst oriented; accesses start at a location and
continue for a programmed number of locations in a
sequence. Accesses begin with an ACTIVE command,
which is followed by a READ or WRITE command.
_______________________________________________
ABSOLUTE MAXIMUM RATINGS:
Voltage on Vcc Supply relative to Vss...................-1 to +4.6V
Operating Temperature TA (Ambient) .............25 ° to +70 °C
Storage Temperature .........................................-55 to +125 °
Power Dissipation…………………………………………8 W
Short Circuit Output Current…………………………..50 mA
Stresses beyond these may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at or beyond these conditions is not
implied. Exposure to these conditions for extended periods
may affect reliability.
PIN ASSIGNMENT (Front View)
168-Pin DIMM
PIN SYMBOL
PIN
1 Vss
43
2 DQ0
44
3 DQ1
45
4 DQ2
46
5 DQ3
47
6 Vcc
48
7 DQ4
49
8 DQ5
50
9 DQ6
51
10 DQ7
52
11 DQ8
53
12 Vss
54
13 DQ9
55
14 DQ10
56
15 DQ11
57
16 DQ12
58
17 DQ13
59
18 Vcc
60
19 DQ14
61
20 DQ15
62
21 NC
63
22 NC
64
23 Vss
65
24 NC
66
25 NC
67
26 Vcc
68
27 WE#
69
28 DQMB0
70
29 DQMB1
71
30 S0#
72
31 DU
73
32 Vss
74
33 A0
75
34 A2
76
35 A4
77
36 A6
78
37 A8
79
38 A10
80
39 BA1
81
40 Vcc
82
41 Vcc
83
42 CK0
84
*128Mb version only
SYMBOL
Vss
DU
S2#
DQMB2
DQMB3
DU
Vcc
NC
NC
NC
NC
Vss
DQ16
DQ17
DQ18
DQ19
Vcc
DQ20
NC
NC
CKE1*
Vss
DQ21
DQ22
DQ23
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
CK2
NC
WP
SDA
SCL
Vcc
PIN SYMBOL
85 Vss
86 DQ32
87 DQ33
88 DQ34
89 DQ35
90 Vcc
91 DQ36
92 DQ37
93 DQ38
94 DQ39
95 DQ40
96 Vss
97 DQ41
98 DQ42
99 DQ43
100 DQ44
101 DQ45
102 Vcc
103 DQ46
104 DQ47
105 NC
106 NC
107 Vss
108 NC
109 NC
110 Vcc
111 CAS#
112 DQMB4
113 DQMB5
114 S1#*
115 RAS#
116 Vss
117 A1
118 A3
119 A5
120 A7
121 A9
122 BA0
123 A11
124 Vcc
125 CK1
126 RFU
PIN SYMBOL
127 Vss
128 CKEO
129 S3#*
130 DQMB6
131 DQMB7
132 RFU
133 Vcc
134 NC
135 NC
136 NC
137 NC
138 Vss
139 DQ48
140 DQ49
141 DQ50
142 DQ51
143 Vcc
144 DQ52
145 NC
146 NC
147 NC
148 Vss
149 DQ53
150 DQ54
151 DQ55
152 Vss
153 DQ56
154 DQ57
155 DQ58
156 DQ59
157 Vcc
158 DQ60
159 DQ61
160 DQ62
161 DQ63
162 Vss
163 CK3
164 NC
165 SA0
166 SA1
167 SA2
168 Vcc
__________________________________________________________________________________________________
P8M648YL, P8M6416YL
1 SpecTek reserves the right to change products
P8M648YLE, P8M6416YLE
or specifications without notice. ©2001 SpecTek
Rev: 02/20/01




SpecTek

P8M648YLE Datasheet Preview

P8M648YLE Datasheet

(P8M648YLx / P8M6416YLEx) 8M/16M x 64 DIMM SDRAM Module

No Preview Available !

Preliminary Release V1
P8M648YL, P16M6416YL
P8M648YLE, P16M6416YLE
CAPACITANCE: (This parameter is sampled. VCC = +3.3V ± 0.3V; f = 1 MHz)
Parameter
Symbol
Input Capacitance: A0 - A10, BAO, RAS#, CAS#, WE#,
Input Capacitance: S0#-S3#, CK0-CK3
Input Capacitance: CKE0, CKE1,
Input Capacitance: DQMB0#, DQMB7
Input Capacitance: SQL, SA0-SA2
Input/Output Capacitance: DQ0-DQ63, SDA
Cl1
Cl2
Cl3
Cl4
Cl5
CIO
Max
64MB 128MB
45 88
25 25
45 45
8 14
66
10 15
Units
pF
pF
pF
pF
pF
pF
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS:
Parameter
Symbol
Min
Supply Voltage
Vcc/Vccq
3.0
Input High (Logic 1) Voltage, All inputs
Input Low (Logic 0) Voltage, All inputs
Input Leakage Current Any input = 0V < VIN < Vcc
All other pins not under test = 0V
Output Leakage Current DQs are disabled; 0V < VOUT < VccQ
Output High Voltage (IOUT = -4 mA)
Output Low Voltage (IOUT = 4 mA)
VIH 2.0
VIL -0.3
II -10
I2 -20
I3 -30
IOZ -10
VOH 2.4
VOL
Max
3.6
Vcc + .3
0.8
10
20
30
10
0.4
Units
V
V
V
uA
uA
V
V
ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vcc = 3.3V ± 10%V, Temp. = 25° to 70 °C
Supply Current
OPERATING CURRENT: ACTIVE mode, burst = 1,
READ or WRITE, tRC > tRC (MIN), one bank active
CL= 2
CL = 3
STANDBY CURRENT: POWER-DOWN mode,
CKE = LOW, no accesses in progress
tCK = 15ns
Symbol
Icc1
Icc1
Icc2
SIZE
64MB
128MB
64MB
128MB
64MB
128MB
-75A
N/A
N/A
1000
2000
40
80
-8A
N/A
N/A
840
1680
40
80
Units
mA
mA
mA
Notes
1, 2, 3
1, 2, 3
STANDBY CURRENT: CS# = HIGH, CKE = HIGH,
tCK = 15ns, both banks idle
CKL = LOW
Icc2
Icc3
64MB
40
40
128MB 80
80
64MB 360 280
128MB 720 560
mA
mA
3, 4
STANDBY CURRENT: CS# = HIGH, CKE = HIGH, tCK = 15ns,
both banks active after tRCD met, no accesses in progress.
OPERATING CURRENT: BURST mode after tRCD CL= 2
met, continuous burst, READ, WRITE, tCK > tCK
MIN, other bank active.
CL = 3
AUTO REFRESH CURRENT tRC > tRC (MIN)
Icc4
64MB 360 280
mA
3, 4
128MB 720 560
Icc5
64MB N/A N/A
mA 1, 2, 3
128MB N/A N/A
Icc5 64MB 1320 1160 mA 1, 2, 3
128MB 2640 2320
Icc6 64MB 1960 1800 mA 1, 2, 3
128MB 3920 3600
NOTES:
1. Icc is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs
open.
2. The Icc current will decrease as the CAS latency is reduced. This is because maximum cycle rate is slower as CAS latency is
reduced.
3. Address transitions average one transition every 30ns.
4. Other input signals are allowed to transition no more than once in any 30ns period.
__________________________________________________________________________________________________
P8M648YL, P8M6416YL
2 SpecTek reserves the right to change products
P8M648YLE, P8M6416YLE
or specifications without notice. ©2001 SpecTek
Rev: 02/20/01


Part Number P8M648YLE
Description (P8M648YLx / P8M6416YLEx) 8M/16M x 64 DIMM SDRAM Module
Maker SpecTek
PDF Download

P8M648YLE Datasheet PDF






Similar Datasheet

1 P8M648YL (P8M648YLx / P8M6416YLEx) 8M/16M x 64 DIMM SDRAM Module
SpecTek
2 P8M648YL (P8M644YL / P8M648YL) 4M/8M x 64 DIMM SDRAM Module
SpecTeK
3 P8M648YL9 (P8M644YL9 / P8M648YL9) 8M/16M x 64 DIMM SDRAM Module
SpecTek
4 P8M648YLE (P8M648YLx / P8M6416YLEx) 8M/16M x 64 DIMM SDRAM Module
SpecTek





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy