Datasheet4U Logo Datasheet4U.com

CXK5V81000ATM-10LLX - 131072-word X 8-bit High Speed CMOS Static RAM

Description

The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, and special feature are low power consumption, high speed.

Features

  • Extended operating temperature range:.
  • 25 to +85°C.
  • Fast access time: (Access time) -85LLX 85ns (Max. ) -10LLX 100ns (Max. ).
  • Low standby current: 28µA (Max. ).
  • Low data retention current: 24µA (Max. ).
  • Single 3.3V supply: 3.3V ± 0.3V.
  • Low voltage data retention: 2.0V (Min. ).
  • Package 8mm × 20mm 32 pin TSOP package Function 131072-word x 8-bit static RAM Structure Silicon gate CMOS IC 32 pin TSOP (Plastic) Block Diagram A10 A11.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CXK5V8512TM High Speed CMOS Static RAM Sony
CXK541000J High Speed CMOS Static RAM Sony
CXK541020J High Speed CMOS Static RAM Sony
CXK5416P High Speed CMOS Static RAM Sony
CXK54256P High Speed CMOS Static RAM Sony

Other Datasheets by Sony Semiconductor Solutions

Part Number Description
CXK5V81000ATM-85LLX 131072-word X 8-bit High Speed CMOS Static RAM
CXK5V81000ATM 131072-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BM 32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BM-10LL 32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BM-70LL 32768-word X 8-bit High Speed CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK5V81000ATM -85LLX/10LLX 131072-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high speed. The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) • Low standby current: 28µA (Max.) • Low data retention current: 24µA (Max.) • Single 3.3V supply: 3.3V ± 0.
Published: |