Part CXG1045N
Description High Power DPDT Switch
Manufacturer Sony Semiconductor Solutions
Size 64.05 KB
Sony Semiconductor Solutions
CXG1045N

Overview

  • Low insertion loss: 8 pin SSOP (Plastic)
  • 4dB (Typ.) @900MHz 0.7dB (Typ.) @1.8GHz
  • High power switching P1dB: 38dBm (Typ.) @900MHz 37dBm (Typ.) @1.8GHz
  • Small package SSOP-8pin: (3 × 6.4 × 1.25mm)
  • Low current: 200µA (Typ.) Application
  • GSM900 or GSM1800 handsets
  • GSM900/GSM1800 dualband handsets Structure GaAs J-FET MMIC Operating Condition Control voltage: Vctl (H) - Vctl (L): 2.5 to 5V @Ta = 25°C ∗ GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1-