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CXK5V8512TM - High Speed CMOS Static RAM

Download the CXK5V8512TM datasheet PDF. This datasheet also covers the CXK5V8512TM- variant, as both devices belong to the same high speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

RAM organized as 65536-words by 8-bits.

extremely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, and special feature are low power consumption, high speed.

Key Features

  • Extended operating temperature range:.
  • 25 to +85°C.
  • Fast access time: (Access time) -85LLX 85ns (Max. ) -10LLX 100ns (Max. ).
  • Low standby current: 14µA (Max. ).
  • Low data retention current: 12µA (Max. ).
  • Single 3.3V supply: 3.3V ± 0.3V.
  • Low voltage data retention: 2.0V (Min. ).
  • Package 8mm × 20mm 32 pin TSOP package Function 65536-word × 8-bit static RAM Structure Silicon gate CMOS IC Block Diag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK5V8512TM-_SonyCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK5V8512TM -85LLX/10LLX 65536-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high speed. The CXK5V8512TM is a suitable RAM for portable equipment with battery back up. 32 pin TSOP (Plastic) Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) • Low standby current: 14µA (Max.) • Low data retention current: 12µA (Max.) • Single 3.3V supply: 3.