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SD11740 - 1200V SiC N-Channel Power MOSFET

General Description

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating

Key Features

  • ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B.

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Datasheet Details

Part number SD11740
Manufacturer Solitron Devices
File Size 73.63 KB
Description 1200V SiC N-Channel Power MOSFET
Datasheet download datasheet SD11740 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KEY FEATURES ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIENCY EXCELLENT REVERSE RECOVERY APPLICATIONS HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES BATTERY CHARGERS SOLAR INVERTERS INDUCTION HEATING SD11740 1200V SiC N-Channel Power MOSFET - 1 D G KS S VDS = 1200V ID @ 25°C = 100A RDS(on) = 8.