SC06801518 Datasheet | Skyworks Solutions

Features - Readily Available From Stock - High Reliability Silicon Oxide- Nitride Dielectric - Low Loss - Typically 0.04 d B in a 50 Ω System - Operation through 26 GHz - Wide Temperature Operation Absolute Maximum Ratings Characteristic Operating Temp Range (TOP) Value -65 to +200°C -65 to +200°C 100 V Description Alpha’s MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are frequently used in applications requiring DC blocking, and RF bypassing, or as a fixed capacitance tuning element in filters, oscillators, and matching networks. The devices have a dielectric posed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric possesses a low temperature coefficient of capacitance, very high insulation resistance. The devices also exhibit excellent long term stability making them suitable for high reliability applications. The capacitors have a high dielectric breakdown which permits the use of thin dielectrics resulting in larger capacitance per unit area than our previous catalog offerings. The temperature coefficient is less that 50 ppm/°C, and operation is suitable from -65°C to 200°C. pared to ceramic capacitors, Skyworks’ MIS chip capacitors offer higher Q, and a lower insertion loss of 0.04 d B, in a 50 Ω system. Insulation resistance is greater than 105M Ω. To acmodate high volume automated assembly methods, wafers can be supplied on expanded film frame. To reduce cost, chips can be supplied with only sample testing packaged in vials. Packaging in waffle packs with 100% electrical test and visual inspection is always available if required. Storage Temp Range (TSTG) Dielectric Withstanding Voltage Electrical Specifications Capacitance Range1: 0.8 to 1000 p F Temperature Coefficient: 50 ppm/°C Typical Capacitance Tolerance2: ±20% Operating Temperature: -65°C to 200°C Dielectric Withstanding Voltage: 100 V Insulation Resistance: 105 Megohms Typical Leakage Current: Typ. < 1 n...