DATA SHEET • CLA4610-085LF: SURFACE MOUNT LIMITER DIODE
Table 1. CLA4610-085LF Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Minimum
Maximum
Units
Reverse voltage
VR 120 V
Forward current at 25 °C
IF
100 mA
RF input power:
PIN
1 μs pulse, 1% duty cycle at TCASE = 85 °C
CW at TCASE = 85 °C
100 W
10 W
CW power dissipation
(at maximum input power, insertion loss = 20 dB) at TCASE = 85 °C
PDISS
10 W
Storage temperature
TSTG
–65 +200
C
Junction temperature TJ 175 C
Operating temperature
TA
–40 +150
C
Electrostatic discharge:
ESD
Charged Device Model (CDM), Class 4
Human Body Model (HBM), Class 1B
Machine Model (MM), Class A
1000 V
500 V
100 V
Note 1: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
CAUTION: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
Table 2. CLA4610-085LF Electrical Specifications (Note 1)
(TA = +25 C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Breakdown voltage
VB IR = 10 A
Reverse current
IR VR = 64 V
Capacitance
CT f = 1 MHz, VR = 6 V
f = 1 MHz, VR = 0 V
Series resistance
RS f = 500 MHz, IF = 10 mA
Series inductance
LS
Carrier lifetime
TL IF = 10 mA
I region width
W
CW thermal resistance
θJC Junction to case
Peak pulse thermal resistance
θP
Single 1 μs pulse width
Junction to case ( 10% duty cycle)
Note 1: Performance is guaranteed only under the conditions listed in this table.
Min
80
Typical
0.28
1.85
0.3
20
4.5
73
7
Max
120
100
0.32
0.35
2.2
Units
V
nA
pF
pF
Ω
nH
ns
μm
C/W
C/W
Table 3. Typical RF Performance @ 25 °C
Part Number
Insertion Loss
@ –10 dBm
(dB)
Input Power for
1 dB Loss
(dBm)
Maximum Pulsed
Input Power
(dBm)
Output @ Maximum
Pulsed Input
(dBm)
CLA4610-085LF
0.2
+16 +43.5
+19
Notes:
Limiter power results @ 2.6 GHz for shunt-connected, single-limiter diode and DC return in 50 Ω line.
Maximum pulsed power for 1 μs pulse and 10% duty cycle with chip @ 25 °C heat sink. Derate linearly to 0 W @ 175 °C.
Maximum CW input power @ 25 °C heat sink. Derate linearly to 0 W @ 175 °C.
Recovery time to insertion loss from limiting state.
Maximum CW
Input power
(dBm)
39
Recovery Time
(ns)
5
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2 May 15, 2015 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 203116B