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DME2859-254 - Silicon Beam-Lead Schottky Mixer Diodes

Download the DME2859-254 datasheet PDF. This datasheet also covers the DME2127-220 variant, as both devices belong to the same silicon beam-lead schottky mixer diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz.

Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Hermetically sealed packages.
  • Statistical process control wafer fabrication.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DME2127-220-Skyworks.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DME2859-254
Manufacturer Skyworks
File Size 1.15 MB
Description Silicon Beam-Lead Schottky Mixer Diodes
Datasheet download datasheet DME2859-254 Datasheet

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Other Datasheets by Skyworks

Part Number Description
DME2859-224 Silicon Beam-Lead Schottky Mixer Diodes
DME2859-234 Silicon Beam-Lead Schottky Mixer Diodes
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DME2850-000 Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages Applications  Microwave integrated circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020) Description The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.